IRF9640
MOSFET P-CH 200V 11A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF9640 is a P-Channel Power MOSFET designed for high-performance applications. This through-hole component features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C, with a maximum power dissipation of 125W. The IRF9640 exhibits a low on-resistance of 500mOhm at 6.6A and 10V gate-source voltage, and a maximum gate charge (Qg) of 44 nC at 10V. It is housed in a standard TO-220AB package, suitable for demanding thermal management. Key electrical parameters include an input capacitance (Ciss) of 1200 pF at 25V and a gate-source threshold voltage (Vgs(th)) of 4V at 250µA. This device operates across a temperature range of -55°C to 150°C and is widely utilized in power switching, motor control, and industrial power supply applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 6.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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