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IRF9640

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IRF9640

MOSFET P-CH 200V 11A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF9640 is a P-Channel Power MOSFET designed for high-performance applications. This through-hole component features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C, with a maximum power dissipation of 125W. The IRF9640 exhibits a low on-resistance of 500mOhm at 6.6A and 10V gate-source voltage, and a maximum gate charge (Qg) of 44 nC at 10V. It is housed in a standard TO-220AB package, suitable for demanding thermal management. Key electrical parameters include an input capacitance (Ciss) of 1200 pF at 25V and a gate-source threshold voltage (Vgs(th)) of 4V at 250µA. This device operates across a temperature range of -55°C to 150°C and is widely utilized in power switching, motor control, and industrial power supply applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs500mOhm @ 6.6A, 10V
FET Feature-
Power Dissipation (Max)125W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V

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