IRF9630STRR
MOSFET P-CH 200V 6.5A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF9630STRR is a P-channel MOSFET designed for demanding applications. This component offers a continuous drain current of 6.5A at 25°C (Tc) and a drain-to-source voltage (Vdss) of 200V. With a maximum ON-resistance (Rds On) of 800mOhm at 3.9A and 10V gate drive, it ensures efficient power handling. The device features a gate charge (Qg) of 29 nC (max) at 10V and an input capacitance (Ciss) of 700 pF (max) at 25V. Power dissipation is rated at 3W (Ta) and 74W (Tc). The IRF9630STRR is housed in a TO-263-3, D2PAK surface mount package and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supply, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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