IRF9630S
MOSFET P-CH 200V 6.5A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF9630S is a P-Channel MOSFET designed for demanding applications. This device features a maximum drain-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 6.5 A at 25°C (Tc). The Rds On is specified at a maximum of 800 mOhm when driven at 3.9 A and 10 V. Key parameters include a gate charge (Qg) of 29 nC (max) at 10 V and an input capacitance (Ciss) of 700 pF (max) at 25 V. With a power dissipation of 3 W (Ta) and 74 W (Tc), it is suitable for surface mount applications in a TO-263 (D2PAK) package. The operating temperature range is -55°C to 150°C. This component finds utility in various industrial power management and control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 3.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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