IRF9620S
MOSFET P-CH 200V 3.5A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF9620S is a P-channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of 3.5A at 25°C (Tc). The Rds(On) is specified at a maximum of 1.5 Ohm at 1.5A and 10V gate drive. With a Gate Charge (Qg) of 22 nC (max) at 10V and an Input Capacitance (Ciss) of 350 pF (max) at 25V, this MOSFET offers efficient switching characteristics. The IRF9620S is housed in a TO-263 (D2PAK) surface-mount package, providing robust thermal management with a maximum power dissipation of 40W (Tc). Operating temperature ranges from -55°C to 150°C. This component is suitable for use in power supply units, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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