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IRF9620S

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IRF9620S

MOSFET P-CH 200V 3.5A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF9620S is a P-channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of 3.5A at 25°C (Tc). The Rds(On) is specified at a maximum of 1.5 Ohm at 1.5A and 10V gate drive. With a Gate Charge (Qg) of 22 nC (max) at 10V and an Input Capacitance (Ciss) of 350 pF (max) at 25V, this MOSFET offers efficient switching characteristics. The IRF9620S is housed in a TO-263 (D2PAK) surface-mount package, providing robust thermal management with a maximum power dissipation of 40W (Tc). Operating temperature ranges from -55°C to 150°C. This component is suitable for use in power supply units, motor control, and automotive applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Tc)
Rds On (Max) @ Id, Vgs1.5Ohm @ 1.5A, 10V
FET Feature-
Power Dissipation (Max)3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V

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