IRF9620
MOSFET P-CH 200V 3.5A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRF9620 is a P-Channel Power MOSFET designed for demanding applications requiring high voltage and current handling. This through-hole component features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 3.5A at 25°C. With a maximum power dissipation of 40W (Tc), the IRF9620 is suitable for power switching and amplification circuits. Key electrical parameters include a maximum on-resistance (Rds On) of 1.5Ohm at 1.5A and 10V, and a gate charge (Qg) of 22 nC at 10V. The device operates within a temperature range of -55°C to 150°C (TJ) and is packaged in a TO-220AB case. Its robust construction and performance characteristics make it a reliable choice for industrial and high-power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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