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IRF9610

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IRF9610

MOSFET P-CH 200V 1.8A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF9610 is a P-channel MOSFET designed for general-purpose switching applications. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain current (Id) rating of 1.8 A at 25°C. The Rds On is specified at a maximum of 3 Ohm when driven at 10 V with a drain current of 900 mA. The device offers a Gate Charge (Qg) of 11 nC at 10 V and an Input Capacitance (Ciss) of 170 pF at 25 V. It supports a Gate-Source Voltage (Vgs) range of ±20 V and has a threshold voltage (Vgs(th)) of 4 V at 250 µA. With a maximum power dissipation of 20 W at 25°C, the IRF9610 is housed in a TO-220AB package suitable for through-hole mounting. This component operates across a temperature range of -55°C to 150°C (TJ). Applications include power management and switching circuits in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Rds On (Max) @ Id, Vgs3Ohm @ 900mA, 10V
FET Feature-
Power Dissipation (Max)20W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds170 pF @ 25 V

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