IRF9610
MOSFET P-CH 200V 1.8A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF9610 is a P-channel MOSFET designed for general-purpose switching applications. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain current (Id) rating of 1.8 A at 25°C. The Rds On is specified at a maximum of 3 Ohm when driven at 10 V with a drain current of 900 mA. The device offers a Gate Charge (Qg) of 11 nC at 10 V and an Input Capacitance (Ciss) of 170 pF at 25 V. It supports a Gate-Source Voltage (Vgs) range of ±20 V and has a threshold voltage (Vgs(th)) of 4 V at 250 µA. With a maximum power dissipation of 20 W at 25°C, the IRF9610 is housed in a TO-220AB package suitable for through-hole mounting. This component operates across a temperature range of -55°C to 150°C (TJ). Applications include power management and switching circuits in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 900mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 25 V |
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