IRF9540STRL
MOSFET P-CH 100V 19A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRF9540STRL is a P-Channel power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 19A at 25°C (Tc). The on-resistance (Rds On) is specified at 200mOhm maximum at 11A and 10V gate drive. With a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA, this MOSFET offers robust control characteristics. Key parameters include input capacitance (Ciss) of 1400pF maximum at 25V and gate charge (Qg) of 61nC maximum at 10V. The Vishay Siliconix IRF9540STRL is housed in a TO-263-3, D2PAK surface mount package and operates across a temperature range of -55°C to 175°C (TJ). Its power dissipation capabilities are 3.7W (Ta) and 150W (Tc). This component is suitable for use in power management, industrial, and automotive sectors. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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