IRF9540S
MOSFET P-CH 100V 19A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF9540S is a P-channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 19A (Tc) at 25°C. The device offers a maximum on-resistance (Rds On) of 200mOhm at 11A and 10V gate drive. With a gate charge (Qg) of 61 nC at 10V and input capacitance (Ciss) of 1400 pF at 25V, it is suitable for demanding switching frequencies. The IRF9540S is packaged in a TO-263-3, D2PAK surface-mount configuration, enabling efficient thermal management with a maximum power dissipation of 150W (Tc). This MOSFET is utilized in industrial and automotive power control systems. Its operating temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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