IRF9530STRL
MOSFET P-CH 100V 12A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF9530STRL is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 12A at 25°C (Tc). With a maximum on-resistance (Rds On) of 300mOhm at 7.2A and 10V gate drive, it offers efficient power handling. The device supports a gate drive voltage up to ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. Key parameters include a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 860 pF at 25V. Power dissipation is rated at 3.7W (Ta) and 88W (Tc). The IRF9530STRL is housed in a TO-263 (D2PAK) surface mount package, suitable for industrial and automotive applications requiring robust switching performance. It operates within a temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 7.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
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