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IRF9530STRL

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IRF9530STRL

MOSFET P-CH 100V 12A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF9530STRL is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 12A at 25°C (Tc). With a maximum on-resistance (Rds On) of 300mOhm at 7.2A and 10V gate drive, it offers efficient power handling. The device supports a gate drive voltage up to ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. Key parameters include a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 860 pF at 25V. Power dissipation is rated at 3.7W (Ta) and 88W (Tc). The IRF9530STRL is housed in a TO-263 (D2PAK) surface mount package, suitable for industrial and automotive applications requiring robust switching performance. It operates within a temperature range of -55°C to 175°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs300mOhm @ 7.2A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds860 pF @ 25 V

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