IRF9530S
MOSFET P-CH 100V 12A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRF9530S is a P-Channel Power MOSFET designed for efficient power switching applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 12A at 25°C (Tc). With a maximum on-resistance (Rds On) of 300mOhm at 7.2A and 10V Vgs, it offers low conduction losses. Key parameters include a gate charge (Qg) of 38 nC (max) at 10V and input capacitance (Ciss) of 860 pF (max) at 25V. The device is packaged in a TO-263-3, D2PAK surface-mount package, facilitating board integration. It supports a gate-source voltage (Vgs) range of ±20V and has a threshold voltage (Vgs(th)) of 4V (max) at 250µA. Power dissipation is rated at 3.7W (Ta) and 88W (Tc). Operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 7.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
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