IRF9520S
MOSFET P-CH 100V 6.8A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF9520S is a P-channel MOSFET designed for demanding applications requiring robust performance. This component offers a Drain-to-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 6.8 A at 25°C. It features a low on-resistance (Rds On) of 600 mOhm at 4.1 A and 10 V gate drive. The device is housed in a TO-263 (D2PAK) surface-mount package, facilitating efficient thermal management with a maximum power dissipation of 60 W at 25°C case temperature. Key electrical parameters include a gate charge (Qg) of 18 nC at 10 V and input capacitance (Ciss) of 390 pF at 25 V. The operating temperature range is -55°C to 175°C. This MOSFET is commonly utilized in power supply, motor control, and industrial automation applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 60W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V |
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