IRF9510STRR
MOSFET P-CH 100V 4A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF9510STRR is a P-Channel MOSFET designed for demanding power applications. This component offers a 100V drain-source breakdown voltage and a continuous drain current capability of 4A at 25°C (Tc). With a maximum Rds(on) of 1.2 Ohms at 2.4A and 10V Vgs, it ensures efficient power switching. The device features a gate charge of 8.7 nC (max) and input capacitance of 200 pF (max). Available in a TO-263 (D2PAK) surface-mount package, this MOSFET is suitable for high-power density designs and operates across a wide temperature range of -55°C to 175°C. Its robust construction supports a maximum power dissipation of 43W at 25°C (Tc). This component finds application in power management, industrial motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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