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IRF9510STRL

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IRF9510STRL

MOSFET P-CH 100V 4A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix P-Channel Power MOSFET, part number IRF9510STRL. This device features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 4 A at 25°C (Tc). With a maximum Rds(on) of 1.2 Ohm at 2.4 A and 10 V, it is designed for efficient power switching. Its low gate charge of 8.7 nC (max) at 10 V and input capacitance of 200 pF (max) at 25 V contribute to high-speed operation. The MOSFET is housed in a TO-263-3, D2PAK surface mount package, suitable for demanding applications in sectors such as industrial automation and power supply design. It offers a maximum power dissipation of 43 W at 25°C (Tc) and operates across a wide temperature range of -55°C to 175°C. This component is supplied in tape and reel packaging for automated assembly.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Rds On (Max) @ Id, Vgs1.2Ohm @ 2.4A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 25 V

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