IRF9510S
MOSFET P-CH 100V 4A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET P-Channel device, part number IRF9510S. This TO-263 (D2PAK) packaged component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 4A at 25°C (Tc). The device offers a maximum On-Resistance (Rds On) of 1.2 Ohm at 2.4A and 10V Vgs. Key electrical parameters include a typical Gate Charge (Qg) of 8.7 nC at 10V and Input Capacitance (Ciss) of 200 pF at 25V. Power dissipation is rated at 3.7W (Ta) and 43W (Tc). Operating temperature range is -55°C to 175°C (TJ). This P-Channel MOSFET is suitable for applications in power management and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 43W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
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