IRF840STRL
MOSFET N-CH 500V 8A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF840STRL is an N-channel Power MOSFET designed for high-performance switching applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 8A at 25°C (Tc). The device exhibits a maximum On-Resistance (Rds On) of 850mOhm at 4.8A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 63 nC (max) at 10V and an input capacitance (Ciss) of 1300 pF (max) at 25V. With a maximum power dissipation of 125W (Tc) and 3.1W (Ta), it is suitable for demanding thermal environments. The IRF840STRL is housed in a TO-263-3, D2PAK surface-mount package and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in power supply units, motor control, and lighting control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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