IRF840LCS
MOSFET N-CH 500V 8A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRF840LCS is an N-Channel Power MOSFET designed for high-voltage switching applications. This component features a drain-source breakdown voltage (Vdss) of 500 V and a continuous drain current (Id) of 8 A at 25°C. With a maximum on-resistance (Rds On) of 850 mOhm at 4.8 A and 10 V gate drive, it offers efficient power handling. The device is packaged in a TO-263-3, D2PAK surface-mount package, suitable for demanding thermal management. Key electrical parameters include a gate charge (Qg) of 39 nC at 10 V and an input capacitance (Ciss) of 1100 pF at 25 V. Maximum power dissipation is rated at 125 W (Tc) and 3.1 W (Ta). This MOSFET is utilized in industrial, computing, and consumer electronics sectors requiring robust power switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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