IRF840LCL
MOSFET N-CH 500V 8A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRF840LCL is an N-Channel Power MOSFET designed for high-voltage applications. Featuring a Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 8 A at 25°C (Tc), this device offers robust performance. The ON-resistance (Rds On) is specified at a maximum of 850 mOhm at 4.8 A and 10 V Gate-Source Voltage (Vgs). With a Gate Charge (Qg) of 39 nC (max) at 10 V and Input Capacitance (Ciss) of 1100 pF (max) at 25 V, it provides efficient switching characteristics. The MOSFET is housed in an I2PAK package (TO-262-3 Long Leads) suitable for through-hole mounting. It supports a maximum Gate-Source Voltage (Vgs) of ±30 V and has a threshold voltage (Vgs(th)) of 4 V at 250 µA. Power dissipation is rated at 3.1 W (Ta) and 125 W (Tc). This component finds application in various industrial and power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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