IRF840L
MOSFET N-CH 500V 8A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF840L is an N-Channel Power MOSFET designed for demanding applications. This component features a 500V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 8A at 25°C with a maximum continuous power dissipation of 125W (Tc). The Rds(on) is specified at a maximum of 850mOhm at 4.8A and 10V gate drive. With a gate charge (Qg) of 63nC (max) at 10V and input capacitance (Ciss) of 1300pF (max) at 25V, it offers efficient switching characteristics. The IRF840L utilizes MOSFET technology and is housed in an I2PAK package (TO-262-3 Long Leads, TO-262AA) for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±20V. This device is commonly employed in power supply, motor control, and industrial automation applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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