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IRF840L

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IRF840L

MOSFET N-CH 500V 8A I2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF840L is an N-Channel Power MOSFET designed for demanding applications. This component features a 500V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 8A at 25°C with a maximum continuous power dissipation of 125W (Tc). The Rds(on) is specified at a maximum of 850mOhm at 4.8A and 10V gate drive. With a gate charge (Qg) of 63nC (max) at 10V and input capacitance (Ciss) of 1300pF (max) at 25V, it offers efficient switching characteristics. The IRF840L utilizes MOSFET technology and is housed in an I2PAK package (TO-262-3 Long Leads, TO-262AA) for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±20V. This device is commonly employed in power supply, motor control, and industrial automation applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Rds On (Max) @ Id, Vgs850mOhm @ 4.8A, 10V
FET Feature-
Power Dissipation (Max)125W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageI2PAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V

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