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IRF840HPBF

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IRF840HPBF

POWER MOSFET TO220AB, 850 M @ 10

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix IRF840HPBF is an N-Channel power MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 7.3A (Tc) at 25°C. With a maximum power dissipation of 125W (Tc), it offers a low on-resistance (Rds On) of 850mOhm at 4.8A and 10V gate drive. The device utilizes Metal Oxide technology and is packaged in a TO-220AB through-hole configuration. Key parameters include a gate charge (Qg) of 39 nC @ 10 V and input capacitance (Ciss) of 1059 pF @ 25 V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, motor control, and lighting control applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.3A (Tc)
Rds On (Max) @ Id, Vgs850mOhm @ 4.8A, 10V
FET Feature-
Power Dissipation (Max)125W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1059 pF @ 25 V

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