IRF840HPBF
POWER MOSFET TO220AB, 850 M @ 10Manufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRF840HPBF is an N-Channel power MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 7.3A (Tc) at 25°C. With a maximum power dissipation of 125W (Tc), it offers a low on-resistance (Rds On) of 850mOhm at 4.8A and 10V gate drive. The device utilizes Metal Oxide technology and is packaged in a TO-220AB through-hole configuration. Key parameters include a gate charge (Qg) of 39 nC @ 10 V and input capacitance (Ciss) of 1059 pF @ 25 V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply units, motor control, and lighting control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1059 pF @ 25 V |
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