IRF840ASTRR
MOSFET N-CH 500V 8A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF840ASTRR, an N-Channel Power MOSFET, offers a 500V drain-source voltage (Vdss) and 8A continuous drain current (Id) at 25°C (Tc). This device features a low on-resistance of 850mOhm maximum at 4.8A and 10V (Vgs), with a gate charge (Qg) of 38 nC maximum at 10V. The input capacitance (Ciss) is 1018 pF maximum at 25V. Designed for surface mounting in a TO-263 (D2PAK) package, it provides high power dissipation capabilities of 125W (Tc) and 3.1W (Ta). Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for applications in industrial power supplies, lighting, and motor control. The maximum gate-source voltage (Vgs) is ±30V, and the threshold voltage (Vgs(th)) is 4V maximum at 250µA. This component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1018 pF @ 25 V |
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