IRF840ASTRL
MOSFET N-CH 500V 8A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF840ASTRL is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 8A at 25°C (Tc). The device offers low on-resistance (Rds On) of 850mOhm maximum at 4.8A and 10V gate drive. With a maximum power dissipation of 125W (Tc), it is suitable for demanding thermal environments. The Vishay Siliconix IRF840ASTRL utilizes advanced MOSFET technology and is supplied in a TO-263 (D2PAK) surface-mount package, ideal for automated assembly. Typical applications include power supplies, motor control, and lighting systems across industrial and consumer electronics. The gate charge is rated at 38 nC maximum at 10V, and input capacitance (Ciss) is 1018 pF maximum at 25V. The device operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1018 pF @ 25 V |
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