IRF840AS
MOSFET N-CH 500V 8A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF840AS is a N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 8A at 25°C (Tc). The Rds On is specified at a maximum of 850mOhm at 4.8A and 10V. With a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 1018 pF at 25V, it offers efficient switching characteristics. The device supports a maximum gate-source voltage (Vgs) of ±30V and has a threshold voltage (Vgs(th)) of 4V at 250µA. Power dissipation is rated at 125W (Tc) and 3.1W (Ta). The IRF840AS is packaged in a TO-263-3, D2PAK (TO-263AB) surface-mount package, making it suitable for demanding power supply designs, industrial motor control, and lighting applications. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1018 pF @ 25 V |
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