IRF840AL
MOSFET N-CH 500V 8A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel MOSFET, part number IRF840AL, offers a 500V drain-to-source voltage and a continuous drain current of 8A at 25°C (Tc). This component features a low on-resistance of 850mOhm maximum at 4.8A, 10V, and a gate charge of 38 nC maximum at 10V. The input capacitance (Ciss) is 1018 pF maximum at 25V. Designed for through-hole mounting, it is housed in an I2PAK (TO-262-3 Long Leads) package. Maximum power dissipation is rated at 3.1W (Ta) and 125W (Tc). The operating temperature range is -55°C to 150°C. This Vishay Siliconix MOSFET is suitable for applications in industrial and power supply sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1018 pF @ 25 V |
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