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IRF840AL

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IRF840AL

MOSFET N-CH 500V 8A I2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix N-Channel MOSFET, part number IRF840AL, offers a 500V drain-to-source voltage and a continuous drain current of 8A at 25°C (Tc). This component features a low on-resistance of 850mOhm maximum at 4.8A, 10V, and a gate charge of 38 nC maximum at 10V. The input capacitance (Ciss) is 1018 pF maximum at 25V. Designed for through-hole mounting, it is housed in an I2PAK (TO-262-3 Long Leads) package. Maximum power dissipation is rated at 3.1W (Ta) and 125W (Tc). The operating temperature range is -55°C to 150°C. This Vishay Siliconix MOSFET is suitable for applications in industrial and power supply sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Rds On (Max) @ Id, Vgs850mOhm @ 4.8A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageI2PAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1018 pF @ 25 V

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