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IRF840A

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IRF840A

MOSFET N-CH 500V 8A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF840A is an N-Channel Power MOSFET designed for demanding applications. This component features a 500V drain-source breakdown voltage (Vdss) and can handle a continuous drain current of 8A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). The IRF840A exhibits a low on-resistance of 850mOhm maximum at 4.8A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 38nC maximum at 10V and an input capacitance (Ciss) of 1018pF maximum at 25V. Operating across a wide temperature range of -55°C to 150°C (TJ), this device is housed in a standard TO-220AB through-hole package. The Vishay Siliconix IRF840A is suitable for use in power supply units, motor control, and industrial automation.

Additional Information

Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Rds On (Max) @ Id, Vgs850mOhm @ 4.8A, 10V
FET Feature-
Power Dissipation (Max)125W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1018 pF @ 25 V

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