IRF840A
MOSFET N-CH 500V 8A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRF840A is an N-Channel Power MOSFET designed for demanding applications. This component features a 500V drain-source breakdown voltage (Vdss) and can handle a continuous drain current of 8A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). The IRF840A exhibits a low on-resistance of 850mOhm maximum at 4.8A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 38nC maximum at 10V and an input capacitance (Ciss) of 1018pF maximum at 25V. Operating across a wide temperature range of -55°C to 150°C (TJ), this device is housed in a standard TO-220AB through-hole package. The Vishay Siliconix IRF840A is suitable for use in power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1018 pF @ 25 V |
Request a Quote
Clients Also Buy
SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
SUP90330E-GE3
MOSFET N-CH 200V 35.8A TO220AB
SQJ443EP-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
