IRF840
MOSFET N-CH 500V 8A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF840 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 500 V. This through-hole component, packaged in a TO-220AB, offers a continuous drain current (Id) of 8A (Tc) at 25°C and a maximum power dissipation of 125W (Tc). Key electrical characteristics include a maximum Rds On of 850mOhm at 4.8A and 10V, and a gate charge (Qg) of 63 nC at 10V. With a gate-source voltage (Vgs) tolerance of ±20V and a threshold voltage (Vgs(th)) of 4V, the IRF840 is suitable for applications requiring robust switching performance in industrial power supplies and motor control systems. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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