IRF830STRR
MOSFET N-CH 500V 4.5A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF830STRR is a 500V N-Channel Power MOSFET in a TO-263 (D2PAK) surface mount package. This device offers a continuous drain current of 4.5A at 25°C (Tc) and a maximum Rds(on) of 1.5 Ohm at 2.7A, 10V. Key characteristics include a gate charge of 38 nC (max) at 10V and an input capacitance (Ciss) of 610 pF (max) at 25V. The MOSFET operates within an ambient temperature range of -55°C to 150°C. Power dissipation is rated at 3.1W (Ta) and 74W (Tc). Applications for this component include power supply units and general-purpose switching in industrial and consumer electronics. The part is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 25 V |
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