IRF830STRL
MOSFET N-CH 500V 4.5A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRF830STRL is an N-Channel Power MOSFET designed for robust performance in demanding applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 4.5A at 25°C (Tc). The Rds On is specified at a maximum of 1.5 Ohm at 2.7A and 10V gate drive. Key electrical characteristics include a Gate Charge (Qg) of 38 nC maximum at 10V and an input capacitance (Ciss) of 610 pF maximum at 25V.
This MOSFET is packaged in a TO-263-3, D2PAK surface mount configuration, supplied in Tape & Reel. It operates across a temperature range of -55°C to 150°C (TJ). The maximum power dissipation is 3.1W (Ta) and 74W (Tc). The IRF830STRL is suitable for use in power supply units, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 25 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
