IRF830S
MOSFET N-CH 500V 4.5A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRF830S is an N-Channel MOSFET designed for high-voltage switching applications. This device offers a 500V Drain-Source Voltage (Vdss) and a continuous drain current of 4.5A at 25°C (Tc). With a maximum Rds(on) of 1.5 Ohm at 2.7A and 10V Vgs, it provides efficient power handling. The MOSFET features a gate charge of 38 nC (max) at 10V and an input capacitance (Ciss) of 610 pF (max) at 25V. It is packaged in a TO-263-3, D2PAK surface mount case and supports a maximum junction temperature of 150°C. The power dissipation is rated at 74W (Tc) and 3.1W (Ta). This component is commonly utilized in power supply units, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 25 V |
Request a Quote
Clients Also Buy
SIJH5700E-T1-GE3
N-CHANNEL 150 V (D-S) 175C MOSFE
SIHA14N60E-GE3
N-CHANNEL 600V
IRL540S
MOSFET N-CH 100V 28A D2PAK
