IRF830L
MOSFET N-CH 500V 4.5A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF830L is an N-Channel Power MOSFET designed for high voltage applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current capability of 4.5A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.5 Ohm at 2.7A and 10V Vgs, it offers efficient switching performance. The device has a gate charge (Qg) of 38 nC at 10V and an input capacitance (Ciss) of 610 pF at 25V. Its power dissipation is rated at 3.1W (Ta) and 74W (Tc). The IRF830L is housed in an I2PAK (TO-262-3 Long Leads) package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 25 V |
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