IRF830BPBF-BE3
MOSFET N-CH 500V 5.3A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRF830BPBF-BE3 is a N-Channel Power MOSFET designed for demanding applications. This through-hole component features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 5.3A at 25°C (Tc). With a maximum power dissipation of 104W (Tc) and an Rds(On) of 1.5 Ohm at 2.5A and 10V, it offers efficient switching performance. The device has a typical gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 325 pF at 100V. It operates within an extended temperature range of -55°C to 150°C (TJ) and is housed in a standard TO-220AB package. This MOSFET is suitable for use in power supply units, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 100 V |
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