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IRF830BPBF-BE3

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IRF830BPBF-BE3

MOSFET N-CH 500V 5.3A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix IRF830BPBF-BE3 is a N-Channel Power MOSFET designed for demanding applications. This through-hole component features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 5.3A at 25°C (Tc). With a maximum power dissipation of 104W (Tc) and an Rds(On) of 1.5 Ohm at 2.5A and 10V, it offers efficient switching performance. The device has a typical gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 325 pF at 100V. It operates within an extended temperature range of -55°C to 150°C (TJ) and is housed in a standard TO-220AB package. This MOSFET is suitable for use in power supply units, motor control, and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.3A (Tc)
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.5A, 10V
FET Feature-
Power Dissipation (Max)104W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220AB
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds325 pF @ 100 V

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