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IRF830BPBF

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IRF830BPBF

MOSFET N-CH 500V 5.3A TO220AB

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix IRF830BPBF is an N-Channel Power MOSFET designed for high-voltage switching applications. This component features a maximum Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) capability of 5.3 A at 25°C. With a maximum On-Resistance (Rds On) of 1.5 Ohm at 2.5 A and 10 V Vgs, it offers efficient power handling. The device is packaged in a TO-220AB through-hole package, suitable for applications requiring robust thermal performance, with a maximum power dissipation of 104 W at 25°C. Key parameters include a gate charge (Qg) of 20 nC at 10 V and input capacitance (Ciss) of 325 pF at 100 V. The IRF830BPBF is utilized across various industries, including industrial power supplies and automotive electronics, where reliable high-voltage switching is critical. Operating temperature ranges from -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5.3A (Tc)
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.5A, 10V
FET Feature-
Power Dissipation (Max)104W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds325 pF @ 100 V

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