IRF830BPBF
MOSFET N-CH 500V 5.3A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRF830BPBF is an N-Channel Power MOSFET designed for high-voltage switching applications. This component features a maximum Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) capability of 5.3 A at 25°C. With a maximum On-Resistance (Rds On) of 1.5 Ohm at 2.5 A and 10 V Vgs, it offers efficient power handling. The device is packaged in a TO-220AB through-hole package, suitable for applications requiring robust thermal performance, with a maximum power dissipation of 104 W at 25°C. Key parameters include a gate charge (Qg) of 20 nC at 10 V and input capacitance (Ciss) of 325 pF at 100 V. The IRF830BPBF is utilized across various industries, including industrial power supplies and automotive electronics, where reliable high-voltage switching is critical. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 100 V |
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