IRF820STRL
MOSFET N-CH 500V 2.5A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel, part number IRF820STRL. This power MOSFET features a 500 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2.5 A at 25°C (Tc). It offers a maximum on-resistance (Rds On) of 3 Ohm at 1.5 A and 10 V gate-source voltage (Vgs). The N-Channel device is housed in a TO-263 (D2PAK) surface mount package, suitable for high-density applications. Key parameters include a gate charge (Qg) of 24 nC and input capacitance (Ciss) of 360 pF. Power dissipation is rated at 3.1 W (Ta) and 50 W (Tc). Operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power supply switching, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
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