IRF820SPBF
MOSFET N-CH 500V 2.5A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRF820SPBF is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 2.5 A at 25°C (Tc). With a maximum Rds(On) of 3 Ohm at 1.5 A and 10 V gate drive, it provides efficient switching characteristics. Key parameters include input capacitance (Ciss) of 360 pF (max) at 25 V and a gate charge (Qg) of 24 nC (max) at 10 V. The device is housed in a TO-263-3, D2PAK surface-mount package, offering a maximum power dissipation of 50 W at 25°C (Tc). This MOSFET is suitable for use in power supply units, lighting, and motor control circuits across various industrial and consumer electronics sectors. Operating temperature ranges from -55°C to 150°C (TJ) with a ±20V maximum gate-source voltage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
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