IRF820S
MOSFET N-CH 500V 2.5A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF820S is an N-Channel Power MOSFET designed for high voltage applications. This component features a 500V Drain-to-Source breakdown voltage (Vdss) and a continuous drain current (Id) of 2.5A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 3 Ohm maximum at 1.5A and 10V Vgs. With a gate charge (Qg) of 24 nC maximum at 10V and input capacitance (Ciss) of 360 pF maximum at 25V, it is suitable for efficient switching. The maximum power dissipation is 3.1W (Ta) or 50W (Tc). Mounting is via surface mount in a TO-263 (D2PAK) package. This MOSFET is utilized in power supply units, motor control, and lighting applications. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
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