IRF820L
MOSFET N-CH 500V 2.5A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRF820L. This component features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2.5A at 25°C (Tc). The Rds On is a maximum of 3 Ohm at 1.5A and 10V, with a gate charge (Qg) of 24 nC at 10V. Input capacitance (Ciss) is 360 pF maximum at 25V. The device offers a maximum power dissipation of 50W at 25°C (Tc) and 3.1W at 25°C (Ta). Operating temperature range is -55°C to 150°C (TJ). The IRF820L is packaged in an I2PAK (TO-262-3 Long Leads) for through-hole mounting. This MOSFET is suitable for applications in industrial power supplies and motor control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V |
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