IRF820AS
MOSFET N-CH 500V 2.5A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix IRF820AS is an N-Channel Power MOSFET designed for high-voltage applications. This component features a 500V Drain-to-Source voltage (Vdss) and a continuous drain current of 2.5A at 25°C (Tc). With a maximum Rds(on) of 3 Ohm at 1.5A and 10V Vgs, it offers efficient switching characteristics. The device has a gate charge (Qg) of 17 nC maximum at 10V Vgs and an input capacitance (Ciss) of 340 pF maximum at 25V Vds. The power dissipation is rated at 50W (Tc). The IRF820AS is supplied in a TO-263 (D2PAK) surface-mount package, suitable for automated assembly. Key applications include power supplies, lighting, and industrial control systems where robust high-voltage switching is required. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 25 V |
Request a Quote
Clients Also Buy
SI2333DDS-T1-GE3
MOSFET P-CH 12V 6A SOT23-3
SQJ443EP-T1_BE3
P-CHANNEL 40-V (D-S) 175C MOSFET
SQA444CEJW-T1_GE3
AUTOMOTIVE N-CHANNEL 60 V (D-S)
