IRF820AL
MOSFET N-CH 500V 2.5A I2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF820AL is an N-Channel Power MOSFET designed for high voltage switching applications. This device features a 500V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2.5A at 25°C (Tc). With a maximum on-resistance (Rds On) of 3 Ohms at 1.5A and 10V Vgs, it offers efficient power handling with a maximum power dissipation of 50W (Tc). The gate charge (Qg) is 17 nC maximum at 10V, and input capacitance (Ciss) is 340 pF maximum at 25V. The IRF820AL is housed in an I2PAK package (TO-262-3 Long Leads, TO-262AA) suitable for through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power supplies, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 25 V |
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