IRF820A
MOSFET N-CH 500V 2.5A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix MOSFET N-Channel IRF820A, a 500V device featuring a continuous drain current of 2.5A (Tc) and a maximum power dissipation of 50W (Tc). This through-hole component, packaged in a TO-220AB, exhibits a maximum Rds(On) of 3 Ohm at 1.5A and 10V Vgs. Key parameters include a gate charge of 17 nC @ 10V and input capacitance of 340 pF @ 25V. Designed for operation across a wide temperature range of -55°C to 150°C, the IRF820A is suitable for power supply applications and general-purpose switching in industrial and consumer electronics. Its N-Channel MOSFET technology ensures efficient power handling.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 340 pF @ 25 V |