IRF7822TRR
MOSFET N-CH 30V 18A 8SOManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF7822TRR is an N-Channel power MOSFET designed for efficient switching applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) capability of 18A at 25°C with a maximum power dissipation of 3.1W. The device exhibits a low on-resistance (Rds On) of 6.5mOhm at 15A and 4.5V gate drive voltage, with a typical gate charge (Qg) of 60nC at 5V. It utilizes advanced MOSFET technology and is housed in an 8-SOIC package suitable for surface mounting. The operating temperature range is -55°C to 150°C. This component is commonly employed in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 16 V |