IRF744PBF
MOSFET N-CH 450V 8.8A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF744PBF is an N-Channel Power MOSFET designed for high voltage applications. This device features a drain-to-source voltage (Vdss) of 450V and a continuous drain current (Id) of 8.8A at 25°C. The on-resistance (Rds On) is specified at a maximum of 630mOhm at 5.3A and 10V gate-source voltage. With a gate charge (Qg) of 80 nC at 10V and input capacitance (Ciss) of 1400 pF at 25V, it offers efficient switching characteristics. The MOSFET is packaged in a TO-220AB through-hole mount configuration and supports a maximum power dissipation of 125W. This component is suitable for use in power supply circuits, motor control, and general-purpose power switching applications across various industrial sectors. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 630mOhm @ 5.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 450 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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