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IRF740STRR

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IRF740STRR

MOSFET N-CH 400V 10A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF740STRR is an N-channel power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 10A at 25°C (Tc). The Rds On is specified at a maximum of 550mOhm at 6A and 10V Vgs. Key characteristics include a Gate Charge (Qg) of 63nC at 10V and an input capacitance (Ciss) of 1400pF at 25V. The device offers a maximum power dissipation of 125W (Tc) and 3.1W (Ta). Packaged in a TO-263 (D2PAK) surface-mount configuration and supplied on tape and reel, this MOSFET is suitable for applications in power supplies, motor control, and lighting. The operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Rds On (Max) @ Id, Vgs550mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 25 V

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