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IRF740STRL

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IRF740STRL

MOSFET N-CH 400V 10A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Vishay Siliconix IRF740STRL is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 10A at 25°C (Tc). With a low Rds(on) of 550mOhm maximum at 6A and 10V Vgs, it offers efficient power handling. The MOSFET's surface mount TO-263 (D2PAK) package facilitates integration into compact designs. Key parameters include a Gate Charge (Qg) of 63 nC maximum at 10V and an Input Capacitance (Ciss) of 1400 pF maximum at 25V. The device is rated for a maximum power dissipation of 125W (Tc) and operates across a temperature range of -55°C to 150°C. This component is suitable for use in power supply, motor control, and lighting applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Rds On (Max) @ Id, Vgs550mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 25 V

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