IRF740S
MOSFET N-CH 400V 10A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF740S is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 400V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C (Tc). With a low Rds On of 550mOhm maximum at 6A and 10V, it minimizes conduction losses. The device offers a maximum gate charge (Qg) of 63 nC at 10V and an input capacitance (Ciss) of 1400 pF at 25V. The IRF740S is packaged in a TO-263 (D2PAK) surface mount package, facilitating automated assembly. Maximum power dissipation is rated at 125W (Tc). This MOSFET is suitable for applications in industrial power supplies, motor control, and power factor correction circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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