IRF740LCS
MOSFET N-CH 400V 10A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Vishay Siliconix MOSFET N-Channel IRF740LCS. This surface-mount TO-263 (D2PAK) device features a 400 V Drain-Source Voltage (Vdss) and a continuous Drain Current (Id) of 10A at 25°C (Tc). With a maximum Rds(on) of 550mOhm at 6A and 10V, it offers efficient switching. The gate drive voltage is specified at 10V for optimal Rds(on) performance. Key parameters include a Gate Charge (Qg) of 39 nC at 10V and an Input Capacitance (Ciss) of 1100 pF at 25V. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for applications in industrial and power supply sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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