IRF740L
MOSFET N-CH 400V 10A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF740L is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 10A at 25°C (Tc). The Rds(On) is specified at a maximum of 550mOhm at 6A and 10V gate drive. Key parameters include a maximum Gate Charge (Qg) of 39 nC at 10V and an Input Capacitance (Ciss) of 1100 pF at 25V. The device supports a ±20V Gate-Source voltage (Vgs(Max)) and has a Gate Threshold Voltage (Vgs(th)) of 4V at 250µA. Packaged in a TO-220AB through-hole configuration, the IRF740L is suitable for power supply units, lighting, and motor control applications within industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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