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IRF740ASTRL

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IRF740ASTRL

MOSFET N-CH 400V 10A D2PAK

Manufacturer: Vishay Siliconix

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Vishay Siliconix IRF740ASTRL is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 400V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 10A at 25°C (Tc). With a low on-resistance (Rds On) of 550mOhm maximum at 6A and 10V Vgs, it minimizes conduction losses. The MOSFET boasts a gate charge (Qg) of 36nC maximum and an input capacitance (Ciss) of 1030pF maximum, facilitating fast switching speeds. It offers a maximum power dissipation of 125W at 25°C (Tc) and 3.1W at 25°C (Ta). Packaged in a TO-263 (D2PAK) surface-mount configuration and supplied on tape and reel, the IRF740ASTRL is suitable for use in power supplies, motor control, and lighting applications. It operates across a wide temperature range of -55°C to 150°C (TJ).

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Rds On (Max) @ Id, Vgs550mOhm @ 6A, 10V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1030 pF @ 25 V

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