IRF740AS
MOSFET N-CH 400V 10A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF740AS is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a 400V drain-source breakdown voltage and a continuous drain current capability of 10A at 25°C (Tc). The low on-resistance (Rds(on)) of 550mOhm at 6A and 10V gate drive ensures minimal conduction losses. With a maximum gate charge of 36 nC at 10V and an input capacitance (Ciss) of 1030 pF at 25V, it supports fast switching speeds. The device is housed in a TO-263 (D2PAK) surface-mount package, facilitating integration into compact designs. Power dissipation is rated at 3.1W (Ta) and 125W (Tc). The operating temperature range of -55°C to 150°C (TJ) makes it suitable for demanding environments. This MOSFET is commonly utilized in power supply units, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 25 V |
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