IRF740
MOSFET N-CH 400V 10A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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The Vishay Siliconix IRF740 is an N-Channel Power MOSFET designed for demanding applications. This through-hole component in a TO-220AB package features a drain-to-source voltage (Vdss) of 400V and a continuous drain current (Id) of 10A at 25°C. With a maximum power dissipation of 125W (Tc), it is suitable for power supply designs, motor control, and lighting applications. The device exhibits a low on-resistance (Rds On) of 550mOhm at 6A and 10V, and a gate charge (Qg) of 63 nC at 10V. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |