IRF737LCS
MOSFET N-CH 300V 6.1A D2PAKManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix N-Channel Power MOSFET, part number IRF737LCS. This device features a 300V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6.1A at 25°C. The Rds(On) is specified at a maximum of 750mOhm at 3.7A and 10V Vgs. Key parameters include a gate charge (Qg) of 17nC maximum at 10V Vgs and an input capacitance (Ciss) of 430pF maximum at 25V Vds. The MOSFET is packaged in a TO-263 (D2PAK) surface-mount configuration. This component finds application in power supply, industrial motor control, and lighting control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |