IRF737LC
MOSFET N-CH 300V 6.1A TO220ABManufacturer: Vishay Siliconix
Categories: Single FETs, MOSFETs
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Vishay Siliconix IRF737LC is an N-Channel Power MOSFET designed for high-efficiency switching applications. This through-hole component features a Drain-Source Voltage (Vdss) of 300 V and a continuous Drain Current (Id) of 6.1 A at 25°C (Tc). The device exhibits a maximum On-Resistance (Rds On) of 750 mOhm at 3.7 A and 10 V gate drive. With a maximum power dissipation of 74 W (Tc), the IRF737LC is suitable for power supply units, motor control, and lighting control systems across various industrial and consumer electronics sectors. Key parameters include a gate charge of 17 nC at 10 V and input capacitance (Ciss) of 430 pF at 25 V. The TO-220AB package ensures robust thermal management.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |
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